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Product Description
Stanford Microdevices CGA-6618 is a high performance GaAs HBT MMIC Amplifier. Designed with the InGaP process technology for excellent reliability. A Darlington configuration is utilized for broadband performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. The amplifier contains two amplifiers for use in wideband Push-Pull CATV amplifiers requiring excellent second order performance. The second and third order non-linearities are greatly improved in the push pull configuration. Amplifier Configuration
Preliminary Preliminary
CGA-6618
Dual CATV Broadband High Linearity GaAs HBT Amplifier
Product Features Excellent CSO/CTB/XMOD Performance at
1 2 3 4
8 7 6 5
+34 dBmV Output Power per Tone Dual Devices in each SOIC-8 Package simplify Push-Pull configuration PC board layout Operates from a single supply Dropping Resistor provides Temperature Compensation
Applications CATV Head End Driver and Predriver Amplifier CATV Line Driver Amplifier
R BIAS=39 Ohms TL = 2 5 C ZS = ZL = 75 Ohms Freq. 50 MHz 500 MHz 860 MHz U nits Min. Ty p. 14.0 14.1 14.0 72 82 74 38 40 40 21.5 21.5 21.0 12.5 17.0 13.5 10.0 19.0 13.5 3.9 4.1 4.4 81 70 65 4.7 Max.
Key 75 Ohm Parameters at Room Temperature 50-860MHz CATV Band Data
Test C onditions: V S = 8.0 V lD= 160mA
Gai n
dB
Output IP 2
Tone spaci ng = 1 MHz P out/Tone = +6 dB m Tone spaci ng = 1 MHz P out/Tone = +6 dB m
50 MHz 500 MHz 860 MHz 50 MHz 500 MHz 860 MHz 50 MHz 500 MHz 860 MHz 50 MHz 500 MHz 860 MHz 50 MHz 500 MHz 860 MHz
dB m
Output IP 3
dB m
Output P 1dB
dB m
Input Return Loss
dB
Output Return Loss
dB
Noi se Fi gure C SO C TB X MOD Vd
A verage of 3 devi ces B alun Inserti on Loss Included Worst C ase Over B and Worst C ase Over B and Worst C ase Over B and 79 C h., Flat, +34dB mV 79 C h., Flat, +34dB mV 79 C h., Flat, +34dB mV
50 MHz 500 MHz 860 MHz
dB dB c dB c dB c V
Note: Measured in Push-Pull Application test board
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2001 Stanford Microdevices, Inc. All worldwide rights reserved.
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
EDS-101994 Rev B
Preliminary CGA-6618 Dual GaAs HBT Amplifier Typical S-Parameters @ VS=8V, ID=160mA, RBIAS=39 Ohms, TL=+25C
Gain vs. Frequency
15 13
S21 (dB)
11 9 7 5 0 200 400 600 800 1000
Frequency (MHz)
-40C 25C 85C
Output Return Loss vs. Frequency
-5
-40C 25C 85C
Input Return Loss vs. Frequency
-5
-10
-10
S22 (dB)
-15
S11 (dB)
-15 -40C 25C 85C 0 200 400 600 Frequency (MHz) 800 1000
-20
-20
-25 0 200 400 600 800 1000
-25
Frequency (MHz)
Absolute Maximum Ratings
Parameter Max. D evi ce C urrent (ID) Max. RF Input Power Max. Juncti on Temp. (TJ) Operati ng Temp. Range (TL) Max. Storage Temp. Absolute Limit 240 mA +16 dBm +150C -40C to +85C +150C
Operati on of thi s devi ce beyond any of these li mi ts may cause permanent damage.
Bias Conditions should also satisfy the following expression: IDVD (max) < (TJ - TL)/Rth,j-l
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
2
http://www.stanfordmicro.com
EDS-101994 Rev B
Preliminary CGA-6618 Dual GaAs HBT Amplifier Typical RF Performance @ VS=8V, ID=160mA, RBIAS=39 Ohms, TL=+25C
IP3 vs. Temperature IP2 vs. Temperature
50 45
IP3 (dBm) IP2 (dBm)
90 85 80 75 70 65 60
0 0 .2 0 .4 0 .6 0 .8 1
-4 0C 2 5C 8 5C
40 35 30 25 20
Frequency (MHz) Second Harmonic vs. Pout and Freq. Data shown is typical at 25C
-40C 25C 85C
0
0 .2
0 .4
0 .6
0 .8
1
Frequency (MHz) Third Harmonic vs. Pout and Freq. Data shown is typical at 25C
100 90 80
IM2 (dBc)
100 90 80
IM3 (dBc)
70 60 50 40 30 20 0 3 6 9 12 15
Pout (dBm) Push-Pull CGA-6618 Noise Figure 50MHz-900MHz, Typical
6 6 M Hz 100MHz 250MHz 500MHz
70 60 50 40 30 20 0 3 6 9 12 15
Pout (dBm) Push-Pull CGA-6618 CTB/CSO/XMOD 34 dBmV/Ch., 79 Ch.,Flat
66M Hz 100M Hz 250M Hz 500M Hz
6 5 4
NF (dB)
110 100 90 80
dBc
3 2 1 0 0 200 400 600 800 1000
Frequency (MHz)
70 60 50 40 0 100 200 300 400 Frequency (MHz) 500 600
C TB C SO+ C SOX m od
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
3
http://www.stanfordmicro.com
EDS-101994 Rev B
Preliminary CGA-6618 Dual GaAs HBT Amplifier
Pin #
1 2,3 4
Function
RF IN Device 1 Ground RF IN Device 2
Description
RF input pin. This pin requires the use of an external DC blocking capacitor as show n in the schematic. Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible. Same as pin 1
1
Device Pin Out
8
5
RF output and bias pin. Bias should be supplied to this pin through an external series resistor RF OUT / Vcc and RF choke inductor. Because DC biasing is present on this pin, a DC blocking capacitor should be used in most applications (see application schematic). The supply side of the bias Device 2 netw ork should be w ell bypassed. Ground Same as pins 2 and 3
2
7
3
6
6,7 8 EPAD
RF OUT / Vcc Same as pin 5 Device 1 Ground Exposed area on the bottom side of the package must be soldered to the ground plane of the board for optimum thermal and RF performance. Several vias should be located under the EPAD as show n in the recommended land pattern below.
4
5
Basic Application Schematic 50-860 MHz
Vs
RBIAS 1F Tant. 0.01F 1000pF 68pF
Rbias
Evalution Board Layout 50-860 MHz
1uF Tant.
220 nH
1 8 Amp 1
RF INPUT .01uF 1000pF 68pF
RF OUTPUT
Macom ETC1-1-13
1000 pF
2,3 6,7
1000 pF
Balun ETC1-1-13
220nH 1000pF 1000pF
Balun ETC1-1-13
1000 pF
4 Amp 2 5
1000 pF
Macom ETC1-1-13
1000pF 220nH
1000pF 68pF 1000pF .01uF
CGA-6618 SOIC-08
220 nH
1uF Tant.
1F Tant.
0.01F
1000pF
68pF
Rbias
ECB-101611 Rev A ESOP-8 Push-Pull Eval Board
RBIAS
Vs
Recommended Land Pattern
.15 [3.81]
Recommended Bias Resistor Values for ID=160mA Supply Voltage(VS) RBIAS RBIAS Pow er Rating 8V 39 1/2W 9V 56 1/2W 12V 91 1W 15V 130 1W
.11 [2.71] .24 [6.22] .16 [4.02] .33 [8.42]
2(VS-VD) RBIAS= ID
.05 [1.27]
.02 [.60]
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
4
http://www.stanfordmicro.com
EDS-101994 Rev B
Preliminary CGA-6618 Dual GaAs HBT Amplifier
Package Outline Drawing
TOP VIEW
8 7 6 5
BOTTOM VIEW
Date Code CGA 6618
1 2 3 4
.078 [1.969] .155 [3.937] .236 [5.994]
.061 [1.549] .194 [4.93]
EXPOSED PAD
.035 [.889] .045 [1.143] .050 [1.27] .016 [.406] .061 [1.549]
.008 [.203]
.058 [1.473]
.013 [.33] x 45
.008
.194 [4.928]
.003 [.076]
SEATING PLANE
SEE DETAIL A
.155 [3.937]
SIDE VIEW
END VIEW
PARTING LINE
DETAIL A
.025 5
Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed.
Part Number Ordering Information
Part Number CGA-6618 Devices Per Reel 500 Reel Size 7"
Note: Parts need to be baked prior to use as discussed in application note EAN-101472 (Special handling information for Exposed Pad TM SOIC-8 products) to ensure no moisture is trapped in the encapsulated package. In production, this baking procedure is not necessary if parts are used within 24 hours of opening the sealed shipping materials.
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
5
http://www.stanfordmicro.com
EDS-101994 Rev B

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